Description
H21A1 is an optical sensor consists of gallium arsenide infrared emitting diode, which is coupled with silicon phototransistor in a plastic housing. the sensor design has features like optimizing the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The housing has a gap, which provides a means of interrupting signal with an opaque material and switches the output from ON to OFF state.
Specification
- Sensing distance: 3mm
- Sensing method: transmissive
- Output configurations: phototransistor
- Maximum emitter collector breakdown voltage: 30V
- Maximum DC forward current: 50mA
- Maximum collector current: 20mA
- Response time: 8-15µ
- Mounting type: through hole
- Package type: slotted
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